PART |
Description |
Maker |
M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns NND - NMOS 512 KBIT (64KB X8) UV EPROM NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储 NMOS 512K 64K x 8 UV EPROM
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8)紫外线存储器和OTP存储 SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储 512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8)紫外线存储器和OTP存储 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储 SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储 CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20 CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED Fuses, 100mA 250V SB 5X15 BULK CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85 CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2 CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 8200UF 450V ELECT SCREW TERM GLASS TUBE FOR DS80 IRON PKG/4 SERV SWITCH USB COAX CPU CABLES 50 FT SERV SWITCH USB COAX CPU CABLES 35 FT 512 KBIT (64KB X8) UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDIP28 64K X 8 OTPROM, 100 ns, PDSO28 64K X 8 OTPROM, 150 ns, PQCC32 64K X 8 OTPROM, 120 ns, PDIP28 64K X 8 OTPROM, 120 ns, PQCC32 64K X 8 OTPROM, 200 ns, PQCC32
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM 512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM CAP 3300UF 50V ELECT SMG RAD 512 Kbit Serial I? Bus EEPROM 512 Kbit Serial IC Bus EEPROM 512 Kbit Serial I裁 Bus EEPROM 512 KBIT SERIAL I²C BUS EEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M27C516-55N6TR |
512 Kbit 32Kb x16 OTP EPROM
|
ST Microelectronics
|
SST29VE512-200-4C-EH SST29VE512-200-4C-NH SST29VE5 |
512 Kbit (64K x8) Page-Mode EEPROM
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SST Silicon Storage Technology, Inc
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SST29LE512-90-4I-PH |
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM
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Silicon Storage Technology, Inc.
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M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40 64K X 16 OTPROM, 100 ns, PQCC44 64K X 16 OTPROM, 100 ns, PDIP40 64K X 16 UVPROM, 100 ns, CDIP40 64K X 16 UVPROM, 45 ns, CDIP40 1 MBIT (64KB X16) UV EPROM AND OTP EPROM
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STMICROELECTRONICS ST Microelectronics
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CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
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Cypress Semiconductor Corp.
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M87C257-20C1TR M87C257-20C3TR M87C257-20C6TR M87C2 |
Address Latched 256 Kbit (32Kb x8) UV EPROM and OTP EPROM
|
STMicroelectronics
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C30616BQC-07-SC C30616EQC-07-SC C30617BST-07-SC C3 |
Ultrafast high voltage rectifier 128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM Ultrafast rectifier PDP energy recovery 4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory High voltage ultrafast diode 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory 1 Mbit serial I²C bus EEPROM 512 Kbit Serial SPI bus EEPROM with high speed clock 256 Kbit serial SPI bus EEPROM with high-speed clock 300V HYPERFAST RECTIFIER HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) 32 Kbit and 64 Kbit serial SPI bus EEPROMs with high-speed clock (CRT TV horizontal deflection) high voltage damper diode HIGH FREQUENCY SECONDARY RECTIFIERS 128 Kbit serial SPI bus EEPROM with high speed clock 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock 光电 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电 128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电 16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock 光电 Ultrafast recovery - 1200 V diode 光电 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电 Ultrafast recovery - high voltage diode 光电 Damper modulation diode for CRT TV 光电 DAMPER MODULATION DIODE FOR VIDEO 光电 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电 HIGH EFFICIENCY ULTRAFAST DIODE 光电 HIGH VOLTAGE ULTRAFAST RECTIFIER 光电 Ultrafast recovery diode 光电
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ECS, Inc. Microchip Technology, Inc. TE Connectivity, Ltd. DB Lectro, Inc. Electronic Theatre Controls, Inc. Samtec, Inc. TriQuint Semiconductor, Inc. Infineon Technologies AG Allegro MicroSystems, Inc. Rochester Electronics, LLC
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